Synthesis of vertically stacked, highly oriented WS2 thin films by Electron beam evaporation

Highly oriented, vertically stacked, thin films of tungsten disulphide (WS2) were synthesized using electron-beam evaporation, in the stacked elemental layer configuration. The growth mechanism and the evolution of the thin films were understood from the cross-sectional morphological studies. A preferential growth along the (001) plane alongwith an increase in crystallinity was observed upon annealing. With annealing, a decrease in the optical band-gap (-0.08 eV) of the films was also observed. A semiconducting behaviour of the films has been observed from the temperature-dependent resistivity measurements. The highest resistivity, of -4.65 x 107 omega.m at room temperature, was observed for the films annealed at 1073 K. A heterojunction of WS2 (1073 K)/pSi showed an increased photocurrent of -75 mu A, under white light illumination

Automated summary

Highly oriented, vertically stacked, thin films of tungsten disulphide (WS2) were synthesized using electron-beam evaporation, and the growth mechanism and evolution of the thin films were studied. The films exhibited semiconductor behavior, with changes in properties observed after annealing. Additionally, a heterojunction of WS2 (1073 K)/pSi displayed an increased photocurrent under white light illumination.