Ammonia gas sensors using 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile semiconductor films

1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile HAT(CN)(6) represents a promising semiconductor material for organic electronic applications ranging from field-effect transistors to magnetic switches and solar cells. Herein, we report for the first time the application of HAT(CN)(6) for designing OFET-based gas sensors. The organic field-effect transistors based on HAT(CN)(6) showed a decent charge carrier mobility of 10(-4) cm(2) V-1 s(-1) coupled with high sensitivity and fast response to low concentrations of ammonia. Quantum chemical DFT calculations were applied to investigate supramolecular interactions of HAT(CN)(6) with ammonia and reveal the origin of the observed sensing effect.

Automated summary

HAT(CN)(6) has shown promise as a semiconductor material for various organic electronic applications, including gas sensors. Organic field-effect transistors based on HAT(CN)(6) exhibit decent charge carrier mobility and high sensitivity towards low concentrations of ammonia, with quantum chemical DFT calculations revealing the underlying supramolecular interactions.