Transformation of the InP(001) surface upon annealing in an arsenic flux

We report experimental study of the transformation of the oxide-coated InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1-xAsx layer is formed on the surface. The transformation of an oxidized surface occurs at a temperature higher at about 60 degrees C than the transformation of an atomically clean surface. The activation energy E-a = 1.17 eV of the formation of an arsenic-containing layer was determined. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480 degrees C and increases to 41% with an increase in the annealing temperature to 540 degrees C. SEM analysis of surface reveals areas with high arsenic content (InAs islands). The size and density of such regions increases with an increase in the annealing temperature and at 540 degrees C reaches 5.5 x 10(3) nm(2) and 6 x 10(9) cm(-2), respectively. However, despite the local inhomogeneities, the main surface area is covered with a uniform InPAs layer. The area covered with InAs islands occupies about 1.5% of the surface area at an annealing temperature of 540 degrees C.

Automated summary

Experimental study showed that an InP1-xAsx layer is formed on the oxide-coated InP(001) surface during annealing in an arsenic flux, with transformation occurring at a temperature about 60 degrees C higher than on a clean surface. The amount of arsenic substitution for phosphorus increases with annealing temperature, leading to the formation of InAs islands of varying sizes and densities. Despite local inhomogeneities, a uniform InPAs layer covers the main surface area, with InAs islands occupying about 1.5% of the surface area at an annealing temperature of 540 degrees C.