Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

The impact of O-2 plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O-2 plasma treatment. The uniformity of O-2 plasma sample is better than control sample, and also the set and reset voltage are more uniform and smaller to suitable for memory operation. Moreover, the O-2 plasma sample shows excellent memory performance, such as high switching endurance cycles (up to 3 x 10(3)), long retention time for 10(4) s at 85 degrees C. These results show that the surface modification with O-2 plasma on IWZO CBRAM device is a critical technique for next generation memory applications.

Automated summary

The O-2 plasma treatment improves the quality and uniformity of the IWZO CBRAM device, resulting in better set and reset voltages for memory operation, as well as excellent memory performance with high endurance cycles and long retention time.