Minimization of bandstructure dependent dark current in InAs/ GaAs quantum dot photodetectors

The paper presents a theoretical model which illustrates the electron capture and emission dynamics in InAs/GaAs quantum dot (QD) photodetector and describes the bandstructure dependent dark current generation. Result of the study predicts the possibility of excessive dark current that depends on the different rates of thermal and phonon assisted tunneling emissions from the quantized energy states. Variation of QD size can alter the quantized states and control the emission rates. Our findings shows that high dark current generated in a QD at a particular temperature and bias voltage can be reduced significantly by changing the size. Hence, optimum QD size is proposed that generates minimum the dark current at different temperatures of operation and applied bias.

Automated summary

Theoretical model presented in the paper illustrates the dynamics of electron capture and emission in InAs/GaAs quantum dot (QD) photodetector, as well as describes the bandstructure-dependent dark current generation. The study predicts the possibility of excessive dark current based on rates of thermal and phonon assisted tunneling emissions from quantized energy states. Findings suggest that by altering QD size, it is possible to significantly reduce high dark current generated at specific temperature and bias voltage, proposing an optimum QD size for minimal dark current generation at different temperatures and applied bias.