Effect of annealing temperature on β-Ga2O3 thin films deposited by RF sputtering method

In this work, Gallium oxide (Ga2O3) films were deposited by RF magnetron sputtering on quartz and n-type Si (100) substrates at room temperature. The effect of annealing temperature on crystalline structure and band gap of beta-Ga2O3 thin films were investigated in detail. X-ray diffraction revealed the formation of monoclinic polycrystalline thin films. The bandgap of the thin films was estimated to be in the range of 4.75 eV-5.15 eV. Raman spectra indicated blue and red shifts of Ga2O3 phonon modes in the thin films. The absorption bands at 647.05 cm(-1) due to vibrations of Ga-O bonds were identified through Fourier-transform infrared spectroscopy.

Automated summary

Gallium oxide (Ga2O3) films were deposited using RF magnetron sputtering on quartz and n-type Si (100) substrates at room temperature, and the effect of annealing temperature on the crystalline structure and band gap of beta-Ga2O3 thin films was investigated. Monoclinic polycrystalline thin films were formed, with a bandgap estimated in the range of 4.75 eV-5.15 eV. Raman spectra showed shifts in Ga2O3 phonon modes, and absorption bands at 647.05 cm(-1) due to vibrations of Ga-O bonds were identified through Fourier-transform infrared spectroscopy.