Modeling current and voltage peaks generation in complementary resistive switching devices

We propose a physical model of complementary resistive switching (CRS) based on the disruption and reformation process of a metallic filament inside each Oxyde Resistive Random Access Memory (OxRRAM) composing the CRS. The driving forces involved in this process are electromigration forces, electron phonon coupling and joule heating. The model accounts well for the experimental CRS current voltage characteristics. The stability of the CRS states and the CRS operation in pulse regime, including the current and voltage peaks generation are discussed.

Automated summary

In this study, a physical model of complementary resistive switching (CRS) based on the disruption and reformation process of a metallic filament inside each Oxyde Resistive Random Access Memory (OxRRAM) composing the CRS is proposed. The driving forces involved in this process include electromigration forces, electron phonon coupling, and joule heating. The model accurately accounts for the experimental CRS current voltage characteristics, and stability of CRS states and operation in pulse regime are discussed.