Structural and electrical characteristics of Gd3+ and Dy3+ based bismuth layer structured ferroelectric ceramics

Two new compounds Bi2GdZrVO9 and Bi2DyZrVO9 of the Aurivillius family having two pseudo perovskite units per cell are processed by the solid-state reaction method. The effect of the lanthanides at the A-site and a combination of transition elements at the B-site of the bismuth layer structured compounds are discussed in detail. The Nyquist plots confirm the contribution of only grain to the polarization mechanism, and thus the depression angle was obtained to estimate its deviation from the Debye behavior. The activation energy estimated for the relaxation process, conduction process, and the grain resistance suggests the involvement of ionization of oxygen vacancy in these processes. The dielectric properties of both the samples were studied in detail and found to have better values as compared to those of the other members of the bismuth layer family. The conductivity analysis using Jonscher's power law is employed to ascertain the conduction mechanism in the samples.

Automated summary

Two new compounds, Bi2GdZrVO9 and Bi2DyZrVO9, with two pseudo-perovskite units per cell from the Aurivillius family were processed using the solid-state reaction method. The effects of lanthanides at the A-site and a combination of transition elements at the B-site of the bismuth layer structured compounds were discussed. The Nyquist plots confirmed the contribution of only grain to the polarization mechanism and the depression angle was used to estimate deviation from the Debye behavior. The activation energy for relaxation processes, conduction processes, and grain resistance suggested the involvement of oxygen vacancy ionization. The dielectric properties of both samples were found to be better compared to other bismuth layer family members, and Jonscher's power law was used for conductivity analysis.