相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts
Hogyoung Kim et al.
JOURNAL OF ELECTRONIC MATERIALS (2021)
Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n-Type to p-Type Material
Elzbieta Guziewicz et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)
ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions
Hogyoung Kim et al.
MATERIALS TODAY COMMUNICATIONS (2020)
Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes
Moonsang Lee et al.
SCIENTIFIC REPORTS (2019)
Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction
Abu Riduan Md Foisal et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect
Abu Riduan Md Foisal et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Photoresponse of a Highly-Rectifying 3C-SiC/Si Heterostructure Under UV and Visible Illuminations
Abu Riduan Md Foisal et al.
IEEE ELECTRON DEVICE LETTERS (2018)
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
F. La Via et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications
Philip Tanner et al.
SCIENTIFIC REPORTS (2017)
Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method
Gulin Ersoz et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET
Ying Wang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Material science and device physics in SiC technology for high-voltage power devices
Tsunenobu Kimoto
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Thermal stability of boron nitride/silicon p-n heterojunction diodes
Kungen Teii et al.
JOURNAL OF APPLIED PHYSICS (2015)
Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon
K. Teii et al.
JOURNAL OF APPLIED PHYSICS (2015)
Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices
Afzaal Qamar et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
Silicon carbide nanolayers as a solar cell constituent
V. Zakhvalinskii et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2015)
Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures
Masaki Goto et al.
APPLIED PHYSICS LETTERS (2014)
Effects of interface state charges on the electrical properties of Si/SiC heterojunctions
J. Liang et al.
APPLIED PHYSICS LETTERS (2014)
Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method
A. Kaya et al.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B (2014)
Zinc oxide thin films on silicon carbide substrates (ZnO/SiC): electro-optical properties and electrically active defects
J. F. Felix et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
Origin of Rectification in Boron Nitride Heterojunctions to Silicon
Kungen Teii et al.
ACS APPLIED MATERIALS & INTERFACES (2013)
Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods
I. Hussain et al.
JOURNAL OF APPLIED PHYSICS (2012)
Silver Schottky contacts to Zn-polar and O-polar bulk ZnO grown by pressurized melt-growth method
Hogyoung Kim et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C
Li Wang et al.
THIN SOLID FILMS (2011)
AIN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices
Chih-Ming Lin et al.
APPLIED PHYSICS LETTERS (2010)
A study of conduction of ZnO film/p-Si heterojunction fabricated by photoinduced electrodeposition under illumination
Jong Duk Lee et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions
Wu Xiaopeng et al.
JOURNAL OF SEMICONDUCTORS (2010)
Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)
Y. H. Zhu et al.
JOURNAL OF APPLIED PHYSICS (2009)
Series resistance determination of Au/Polypyrrole/p-Si/Al structure by current-voltage measurements at low temperatures
S. Aydogan et al.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS (2009)
Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy
M. Zielinski et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2009)
Fabrication of zinc oxide nanorods based heterojunction devices using simple and economic chemical solution method
N. Koteeswara Reddy et al.
APPLIED PHYSICS LETTERS (2008)
Characterization of n-ZnO/p-Si films grown by magnetron sputtering
F Chaabouni et al.
SUPERLATTICES AND MICROSTRUCTURES (2006)
Heteroepitaxial growth of (111) 3C-SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition
T Nishiguchi et al.
APPLIED PHYSICS LETTERS (2004)
High-temperature single-crystal 3C-SiC capacitive pressure sensor
DJ Young et al.
IEEE SENSORS JOURNAL (2004)
Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces
J Pezoldt et al.
APPLIED SURFACE SCIENCE (2001)
分享论文
