Enhanced performance of solar cell with n+ emitter by SiO2 nanospheres assisted liquid phosphorus diffusion

In order to improve the quality of n(+) emitter fabricated by phosphorus doping, SiO2 nanospheres were added into a phosphoric acid solution for spin-on doping. Through a complete analysis of the trade-off between the diffusion uniformity and sheet resistance, the particle size of SiO2 nanospheres is selected to be 230 nm. It is found that with the increase of phosphoric acid concentration from 50% to 85%, the average sheet resistance decreases from 128.5 Omega/sq to 18.1 Tau/sq, and the diffusion uniformity increased from 95.2% to 98.5%. In a large concentration range, the surface doping concentration of the emitter will increase with phosphoric acid, but when the concentration of phosphoric acid reaches 80%, the surface doping concentration will be almost unchanged. Nevertheless, different from above, the p-n junction depth has little dependence on the phosphoric acid concentration. Moreover, the efficiencies in the solar cell center and edge are enhanced by 40.54% and 88.08% respectively using SiO2 nanospheres assisted diffusion.

Automated summary

By using SiO2 nanospheres for phosphoric acid spin-on doping, the quality of n(+) emitter can be improved and efficiency enhanced. With the change in phosphoric acid concentration, sheet resistance decreases, diffusion uniformity increases; surface doping concentration increases with phosphoric acid within a certain range.