期刊
SOLAR ENERGY
卷 226, 期 -, 页码 251-259出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2021.08.032
关键词
Cu2ZnGe(S; Se)(4); Sulfurization; Na; Se; Wide band gap; Solar cells
资金
- Spanish Ministry of Science, Innovation and Universities Project [WINCOST: ENE2016-80788-C5-2-R, CELL2-WIN: PID2019-104372RB-C32]
- European Project INFINITE-CELL [H2020-MSCA-RISE-2017-777968]
- Spanish Ministry of Science, Innovation and Universities within the Juan de la Cierva Program [IJC2018-038199-I]
- Generalitat de Catalunya [S2018/NMT-4291]
- MINECO [CSIC13-4E-1794]
- European Union (FEDER, FSE)
- CM [S2018/NMT-4291 TEC2SPACE]
The influence of Na content and incorporation procedure into CZGSSe thin films and solar cells was investigated, revealing significant effects on the distribution and incorporation of S in the lattice. The evaporation of Se together with NaF led to increased S concentration in the surface region, resulting in higher band gap energy and open circuit voltage in CZGSSe-based photovoltaic devices.
The influence of the Na content and incorporation procedure into Cu2ZnGe(S,Se)4 (CZGSSe) thin films and solar cells is investigated. The effects of the presence/absence of Se during the deposition of a 15 nm thick NaF layer before and/or after the Cu2ZnGeSe4 (CZGSe) co-evaporation, are compared. Both the Na content, and Na-supply method significantly influence the incorporation of S into the CZGSe lattice and its distribution in the absorber. A [S]/([S] + [Se])-gradient throughout the CZGSSe layers is observed for all the samples and correlated with effects induced by the Na incorporation procedure. For instance, the evaporation of Se together with NaF leads to an increased S concentration in the surface-region of the CZGSSe layer and a modified surface morphology. CZGSSe-based solar cells with band gap energies of about 2 eV are obtained, regardless of the NaF addition method used, while the absence of the NaF layer reduces the S incorporation and the Eg. However, the evaporation of Se together with NaF results in higher Eg and open circuit voltage VOC, probably related to a higher S accumulation near the surface, demonstrating the importance of the [S]/([S] + [Se]) distribution. CZGSSe-based photovoltaic devices with efficiency of 3.2 % and Eg of 2 eV are obtained.
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