4.8 Article

Polarized Electroluminescence Emission in High-Performance Quantum Rod Light-Emitting Diodes via the Langmuir-Blodgett Technique

期刊

SMALL
卷 17, 期 32, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202101204

关键词

Langmuir-Blodgett; polarized electroluminescence emission; quantum rod alignment; quantum rod light-emitting diodes; quantum rods

资金

  1. National Research Foundation of Korea (NRF) - Korea government (Ministry of Science and ICT) [2016R1A2B3009301, 2020R1I1A1A01073425, 2020R1C1C1013079, 2021R1A4A1027087]
  2. Pusan National University Research Grant
  3. National Research Foundation of Korea [2021R1A4A1027087, 2020R1I1A1A01073425, 2020R1C1C1013079, 2016R1A2B3009301] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This study reports polarized electroluminescence emission in high-performance QR-LEDs achieved by employing the Langmuir-Blodgett (LB) technique, which successfully aligns QRs and produces polarized light emission. The advantageous features of the LB technique, such as nondestructiveness, precise thickness control, and the nonnecessity of an additional matrix material, enable the fabrication of QR-LEDs in the same procedure as the standard spin coating-based scheme. The devices fabricated via the LB technique exhibit excellent performance, with low turn-on voltage, high peak luminance, and peak external quantum efficiency, indicating new opportunities for QRs in display technologies.
Due to their anisotropic structure, quantum rods (QRs) feature unique properties that differ from quantum dots, such as suppression of non-radiative Auger recombination and linearly polarized light emission. Despite many potential advantages, the progress of QR-based light-emitting diodes (QR-LEDs) is left behind due to the difficulty in aligning QRs. In this study, polarized electroluminescence emission is reported in high-performance QR-LEDs by employing the Langmuir-Blodgett (LB) technique. The adoption of the LB technique successfully produces a highly dense and smooth QR film with a high degree of alignment. As a result, the aligned QR films exhibit polarized photoluminescence emission with a degree of linear polarization of 2.1. Advantageous features of the LB technique, such as nondestructiveness, precise thickness control, and the nonnecessity of an additional matrix material, allow to fabricate QR-LEDs with the same procedure as the standard spin coating-based scheme. The device is fabricated via the LB technique, which shows excellent device performance, such as the low turn-on voltage of 1.8 V, peak luminance of 56 287 cd m(-2), and peak external quantum efficiency (EQE) of 10.33%. Furthermore, these devices clearly exhibit an indication of polarized electroluminescence emission, which opens new opportunities for QRs in display technologies.

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