Thin films of tungsten oxide materials for advanced gas sensors

Thin film technology shows high promise in fabrication of electronic devices such as gas sensors. Tungsten trioxide (WO3), as one of the best-known metal oxide semiconductors (MOS) sensing materials, has attracted significant interest for application in gas sensors. In this review, WO3 thin films and their promising utilization as the sensing layers are overviewed to highlight their potential in gas sensors. First, the sensing mechanism for WO3 materials is briefly discussed. Then, several methods for WO3 film preparation are summarized. Following we discuss the specific gas sensing performances of WO3 film sensors to NO2, H2, NH3, and H2S. Strategies to improve the sensor properties such as sensitivity, response-recovery speed and selectivity are also discussed. Finally, the future perspectives and challenges of WO3 thin film sensors are addressed.

Automated summary

Thin film technology, specifically tungsten trioxide (WO3) as a metal oxide semiconductor (MOS) sensing material, shows great promise for gas sensor applications. This review provides an overview of WO3 thin films, their sensing mechanisms, preparation methods, gas sensing performances, and strategies for improving sensor properties. Future perspectives and challenges of WO3 thin film sensors are also discussed.