4.6 Article

Capacitive Measurements of SiO2 Films of Different Thicknesses Using a MOSFET-Based SPM Probe

期刊

SENSORS
卷 21, 期 12, 页码 -

出版社

MDPI
DOI: 10.3390/s21124073

关键词

scanning probe microscopy (SPM); FET sensor; scanning capacitive microscopy (SCM); electrostatic force microscopy (EFM); subsurface imaging

资金

  1. National Research Foundation of Korea (NRF) - Korea government
  2. (MSIT) [NRF-2018R1D1A1B07049316]

向作者/读者索取更多资源

Utilizing scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films of varying thicknesses allows for analysis of passivation layers of integrated circuits and subsurface imaging of various dielectric layers. The technique evaluates linearity, measures frequency response, and reflects the electrical characteristics of the system, including the MOSFET, conductive tip, and local sample area.
We utilized scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films that were several hundred nanometers in thickness. The signal varied depending on the thickness of the silicon dioxide film covering the electrodes. We deposited a 400- or 500-nm-thick silicon dioxide film on each sample electrode. Thick oxide films are difficult to analyze using conventional probes because of their low capacitance. In addition, we evaluated linearity and performed frequency response measurements; the measured frequency response reflected the electrical characteristics of the system, including the MOSFET, conductive tip, and local sample area. Our technique facilitated analysis of the passivation layers of integrated circuits, especially those of the back-end-of-line (BEOL) process, and can be used for subsurface imaging of various dielectric layers.

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