相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
Ming Xiao et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Design Guidelines and Performance Tradeoffs in Recessed AlGaN/GaN Schottky Barrier Diodes
Ankit Soni et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage
Michael Basler et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-In Schottky Barrier Diode
Jiacheng Lei et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
A > 3 kV/2.94 mΩ.cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique
Tao Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Low ON-Resistance GaN Schottky Barrier Diode With High VON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology
Jingnan Gao et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
Sen Huang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors
Jun Ma et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage
Jun Ma et al.
IEEE ELECTRON DEVICE LETTERS (2017)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga's Figure-of-Merit
Chuan-Wei Tsou et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths
Youngrak Park et al.
ELECTRONICS LETTERS (2014)
Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination
Silvia Lenci et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode
Jae-Gil Lee et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure
Elison Matioli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking
E. Bahat-Treidel et al.
IEEE ELECTRON DEVICE LETTERS (2012)
High breakdown GaNHEMT with overlapping gate structure
NQ Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2000)