Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET) design and assistance with high-quality low-pressure chemical vapor deposition SiN (x) , a low reverse leakage current (similar to 10 nA mm(-1)@-600 V) and a high reverse breakdown voltage of over 1.78 kV (@1 mu A mm(-1)) are obtained. At the same time, we achieve a low turn-on voltage of 0.57 V and a low differential on-state resistance R (on,sp) of 1.49 m omega cm(2) for thin-barrier GET SBDs with an anode-to-cathode distance (L (AC)) of 15 mu m, yielding a Baliga's figure of merit of 2120 MW cm(-2). Moreover, this proposed diode process flow is compatible with AlGaN/GaN high-electron-mobility transistors, which is promising for its integration in the smart GaN platform.

Automated summary

In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) with high device uniformity were fabricated using thin-barrier (5 nm) AlGaN/GaN heterostructures. By combining a gated-edge termination (GET) design and high-quality SiN (x) deposition, low reverse leakage current and high reverse breakdown voltage were achieved. The proposed diode process flow is also compatible with AlGaN/GaN high-electron-mobility transistors, showing promise for integration in the smart GaN platform.