2D materials-based homogeneous transistor-memory architecture for neuromorphic hardware

In neuromorphic hardware, peripheral circuits and memories based on heterogeneous devices are generally physically separated. Thus, exploration of homogeneous devices for these components is key for improving module integration and resistance matching. Inspired by the ferroelectric proximity effect on two-dimensional (2D) materials, we present a tungsten diselenide-on-lithium niobate cascaded architecture as a basic device that functions as a nonlinear transistor, assisting the design of operational amplifiers for analog signal processing (ASP). This device also functions as a nonvolatile memory cell, achieving memory operating (MO) functionality. On the basis of this homogeneous architecture, we also investigated an ASP-MO integrated system for binary classification and the design of ternary content-addressable memory for potential use in neuromorphic hardware.

Automated summary

In this study, a novel device architecture combining tungsten diselenide and lithium niobate is proposed for use as a nonlinear transistor and nonvolatile memory. Based on this homogeneous architecture, an integrated system for binary classification and ternary content-addressable memory design for neuromorphic hardware is also investigated.