Wide Bandgap DC-DC Converter Topologies for Power Applications

Over the last decade, dc-dc power converters have attracted significant attention due to their increased use in a number of applications from aerospace to renewable energy. The interest in wide bandgap (WBG) power semiconductor devices stems from outstanding features of WBG materials, power device operation at higher temperatures, larger breakdown voltages, and the ability to sustain larger switching transients than silicon (Si) devices. As a result, recent progress and development of converter topologies, based on WBG power devices, are well-established for power conversion applications in which classical Si-based power devices show limited operation. Currently, Si carbide (SiC) and gallium nitride (GaN) are the most promising semiconductor materials that are being considered for the new generation of power devices. The use of new power semiconductor devices, such as GaN high electron mobility transistors (GaN HEMTs), leads to minimization of switching losses, allowing high switching frequencies (from kHz to MHz) for realizing compact power converters. Finally, design recommendations and future research trends are also presented.

Automated summary

DC-DC power converters using wide bandgap (WBG) power semiconductor devices, such as SiC and GaN, have become increasingly popular due to their outstanding features and ability to minimize switching losses, allowing for higher switching frequencies and more compact designs. This new generation of power devices has revolutionized power conversion applications and opened up new possibilities for future research and development in the field.