期刊
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
卷 938, 期 -, 页码 1-72出版社
ELSEVIER
DOI: 10.1016/j.physrep.2021.07.006
关键词
2D materials; Sub-10 nm transistors; Tunnel transistor; Negative capacitance transistor; Quantum transport simulations; Density functional theory
资金
- National Natural Science Foundation of China [91964101, 11704008, 11704406, 11804140, 12004307]
- Ministry of Science and Technology of China [2016YFB0700600, 2017YFA206303]
- Research Foundation of Education Bureau of Shaanxi Province, China [19JS009]
- High-Performance Computing Platform of Peking University
- Fund of the State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications)
Two-dimensional semiconductors show promising electrostatics and carrier transportability, offering potential for scaling FETs' gate length down to the sub-10 nm region without compromising device performance. Many 2D FETs exhibit excellent performance for high performance and/or low power applications, extending Moore's law down to 1 to 2-nm gate length.
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and further scaling their gate length down to the sub-10 nm region is becoming extremely difficult. Benefitting from the atomic-scale thickness and dangling-bond-free flat surface, two-dimensional semiconductors (2DSCs) have good electrostatics and carrier transportability. The FETs based on the 2DSC channel have the potential to scale the FETs' gate length down to the sub-10 nm region while avoiding apparent degradation of the device performance. In this review, we introduce the recent experimental and ab initio quantum transport simulation progress in the 2D FETs with a gate length less than 10 nm. Remarkably, in the extremely optimistic condition, many 2D FETs (i.e phosphorene, silicane, arsenene, tellurene, WSe2, InSe, Bi2O2Se, GeSe, etc.) show excellent device performance for the high performance and/or low power applications and indeed can extend Moore's law down to 1 similar to 2-nm gate length in terms of the ab initio quantum transport simulation. The sub-10 nm 2D tunneling FETs are predicted to generally have smaller energy-delay products compared with the 2D metal-oxide-semiconductor FETs and appear more competitive for the low power application. The carrier effective mass plays a key role in determining the device performance. Via negative capacitance techniques, the device performance can be further improved. Finally, we outline the challenges and outlook on the future development directions in the sub-10 nm 2D FETs. (C) 2021 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据