Hot Raman amplification

A parameter regime is identified for Raman amplification at high temperatures, where deleterious laser-plasma instabilities that limit current amplification experiments are avoided, yet sufficient gain for an effective power amplifier is attained. Calculations and kinetic simulations show that even at high temperatures, an amplifier is able to satisfy the criteria set forth to present a proof-of-principle system scalable to high powers, where energy transfer efficiencies are >= 30%, intensity gains are >= 10, and output intensities are >= 100x the pump intensity. Published under an exclusive license by AIP Publishing.

Automated summary

A parameter regime has been identified for Raman amplification at high temperatures, allowing for sufficient gain for an effective power amplifier. Experimental results show that even at high temperatures, the amplifier meets the criteria set forth for scalability to high powers.