期刊
PHYSICAL REVIEW LETTERS
卷 126, 期 21, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.126.215701
关键词
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资金
- National Science Foundation, Division of Materials Research (NSF-DMR) [1809756]
- DOE-NNSA's Office of Experimental Sciences
- DOE Office of Science [DE-AC02-06CH11357]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1809756] Funding Source: National Science Foundation
Bulk, highly oriented, crystalline 4H hexagonal silicon (4H-Si) was successfully synthesized through a metastable crystalline transition pathway by heating the single-crystalline Si-24 allotrope. The resulting 4H-Si crystallites exhibit an orientation relationship with the Si-24 crystals, indicating a structural relationship between the two phases. Optical absorption measurements confirm that 4H-Si has an indirect band gap near 1.2 eV, in agreement with first principles calculations.
We report the synthesis of bulk, highly oriented, crystalline 4H hexagonal silicon (4H-Si), through a metastable phase transformation upon heating the single-crystalline Si-24 allotrope. Remarkably, the resulting 4H-Si crystallites exhibit an orientation relationship with the Si-24 crystals, indicating a structural relationship between the two phases. Optical absorption measurements reveal that 4H-Si exhibits an indirect band gap near 1.2 eV, in agreement with first principles calculations. The metastable crystalline transition pathway provides a novel route to access bulk crystalline 4H-Si in contrast to previous transformation paths that yield only nanocrystalline-disordered materials.
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