Hidden Silicon-Vacancy Centers in Diamond

We characterize a high-density sample of negatively charged silicon-vacancy (SiV-) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of SiV- centers that is not typically observed in photoluminescence and which exhibits significant spectral inhomogeneity and extended electronic T-2 times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.

Automated summary

A high-density sample of negatively charged silicon-vacancy (SiV-) centers in diamond was characterized using collinear optical multidimensional coherent spectroscopy, revealing a hidden population of SiV- centers with significant spectral inhomogeneity and extended electronic T-2 times, likely caused by strain and providing a potential mechanism for controlling electric coherence in color-center-based quantum devices.