4.4 Article

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed-Grown m-Plane GaN Substrate

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202100175

关键词

cathodoluminescence; dislocations; m; -plane GaN; stacking faults

资金

  1. International Center for Materials Nanoarchitectonics (MANA)
  2. MEXT [JPJ005357]

向作者/读者索取更多资源

The extended defects in m-plane seed-grown GaN substrate, specifically the presence of basal-plane stacking faults (BSFs), have been studied using cathodoluminescence (CL) and transmission electron microscopy (TEM). The luminescence characteristics and emission peaks of I-1 and I-2 BSFs have been identified through high-resolution CL and spatially resolved spectral analysis. Additionally, the movement of dislocations under electron beam irradiation and its correlation with stacking faults have been discussed.
The extended defects in m-plane seed-grown GaN substrate have been investigated by cathodoluminescence (CL) and transmission electron microscopy (TEM). The presence of basal-plane stacking faults (BSFs) has been confirmed in the edge part of seed growth. The luminescence features of BSFs are characterized by high-resolution CL with monochromatic image and spatially resolved spectral analysis. Most stacking faults are intrinsic I-1 BSFs with characteristic emission peak centered at 3.42 eV. There are a few intrinsic I-2 BSFs which show varied emission energies of 3.33-3.38 eV. The motion of dislocations under electron beam irradiation has also been monitored and the correlation with stacking faults is discussed.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据