E-Band InAs/GaAs Trilayer Quantum Dot Lasers

The introduction of a closely stacked quantum dot (QD) structure is considered as one of the most effective approaches to extend the emission wavelength of InAs/GaAs QDs beyond 1.3 mu m (1300 nm). Herein, a trilayer QD structure (three closely stacked QD layers) is proposed to further extend the emission wavelength of QDs. Room-temperature (RT) emission at 1418 nm from InAs/GaAs trilayer QDs is demonstrated. Moreover, based on these results, an E-band InAs/GaAs trilayer QD laser is fabricated on a GaAs substrate, achieving RT oscillation at 1370 nm with a low threshold current density of 96 A cm(-2) under continuous-wave mode operation. The results indicate that the trilayer QD structure is promising for realizing high-performance QD lasers on GaAs substrate over 1300 nm without incorporating metamorphic buffer layers.

Automated summary

The trilayer quantum dot structure has successfully extended the emission wavelength to 1370 nm without the need for metamorphic buffer layers, demonstrating great potential for high-performance QD lasers on GaAs substrate.