4.4 Article

High-Performance AlGaN-Based Solar-Blind UV Photodetectors for Sensing Applications

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202100207

关键词

aluminum gallium nitride; amplifiers; optical signal detection; photodetectors; sensing

资金

  1. Natural Science Foundation of Fujian Province of China [2017J01713]
  2. National Natural Science Foundation of China [61504144]

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The study focused on developing high-performance AlGaN-based solar-blind UV photodetectors and designing a discrete signal amplifier circuit for weak signal detection, ultimately leading to the successful development of a portable solar-blind UV detection system.
The full solid-state, intrinsic cutoff solar-blind UV photodetectors are widely used in the military and civilian fields. Herein, to achieve real-time solar-blind UV signal detection for application in portable equipment, the material epitaxy, device fabrication, and performance characterization of high-performance back-illuminated AlGaN-based solar-blind UV photodetectors are conducted at first. Based on the photodetector, a discrete signal amplifier circuit is subsequently designed and prepared to fulfill the weak solar-blind signal detection. Through assembling the amplifier circuit with the AlGaN-based solar-blind UV photodetector, it can output real-time voltage signal with different amplitude according to the intensity of the incident UV light signal. This study is of great significance for developing a portable solar-blind UV detection system.

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