Electrically Active Defects Induced by α-Particle Irradiation in p-Type Si Surface Barrier Detector

Herein, the investigation of radiation-induced defects generated in the Al/SiO2/p-type FZ Si surface barrier detector upon irradiation with alpha-particles at room temperature using capacitance-voltage (C-V) and current deep-level transient spectroscopy (IDLTS) methods is conducted. The carried out C-V measurements indicate the formation of at least 8 x 10(12) cm(-3) radiation-induced acceptor traps at the depth fairly close to that where, according to TRIM simulations, the highest concentration of vacancy-interstitial pairs is created by the incoming alpha-particles. The studies conducted by the current DLTS technique allow to relate the observed increase in the acceptor concentration with the near-midgap level at E-V + 0.56 eV. This level can apparently be associated with V2O defects recognized previously to be responsible for the space-charge sign inversion in the irradiated n-type Si detectors.

Automated summary

The investigation focused on radiation-induced defects in the Al/SiO2/p-type FZ Si surface barrier detector irradiated with alpha-particles at room temperature using C-V and IDLTS methods. The measurements revealed the formation of radiation-induced acceptor traps and linked the observed increase in acceptor concentration to a near-midgap level. This level was associated with V2O defects previously identified as responsible for space-charge sign inversion in irradiated n-type Si detectors.