Tunable Schottky barrier in planar two-dimensional metal/black phosphorus heterojunctions

Edge contact between two-dimensional materials and metal can achieve small contact resistance because of strong interaction. In this work, we study the electronic properties of in-plane black phosphorus (BP) based heterojunctions with graphene (Gra) and borophene?12 (Boro?12) electrodes using first principle calculations. The small Schottky barrier along zigzag direction of BP is shown in Gra/BP/Gra and Boro?12/BP/Boro?12 heterojunctions because of the anisotropy of BP. The applied strain can modulate both the electron barrier and the hole barrier for armchair BP based heterojunction. In addition, we find that electric field not only can modulate the height of the Schottky barrier effectively but also the type of Schottky contact of Gra/BP/Gra and Boro?12/ BP/Boro?12 structures. The results suggest a promising way to design tunable Schottky diodes based on Gra/BP/ Gra and Boro?12/BP/Boro?12 heterojunctions through modulating the electric field.

Automated summary

This study investigates the electronic properties of heterojunctions composed of in-plane black phosphorus with graphene and borophene?12 electrodes using first principle calculations. It is found that strain and electric field modulation can alter the electron barrier and the hole barrier in these heterojunctions, suggesting a promising way to design tunable Schottky diodes.