Prediction of thermal conductivity and phonon spectral of silicon material with pores for semiconductor device

The silicon material with pores is a kind of promising semiconductor material, which greatly enhances the work efficiency with the existence of pores to reduce the thermal conductivity. To demonstrate the size effect, the nonequilibrium molecular dynamics (NEMD) method is adopted to study thermal transport in the silicon device with rectangle-shaped pores of different characteristic sizes. Great differences on the temperature distribution and on the effective thermal conductivity of the silicon device are found when the characteristic size is changed. The numerical results show that a small pore about 0.4 in porosity can introduce a 74.40% reduction in thermal conductivity at the room temperature. Besides, the related properties based on the phonon concept are explored by the phonon spectral energy density (SED) method. The results indicate the importance of considering the geometry effect in the analysis of the micro- and nanostructured silicon materials.

Automated summary

Silicon material with pores is a promising semiconductor material that enhances work efficiency by reducing thermal conductivity. The study shows that changing the characteristic size of pores in silicon devices can significantly impact temperature distribution and effective thermal conductivity. Results indicate that a small pore with a porosity of about 0.4 can cause a significant reduction in thermal conductivity at room temperature.