Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction

All-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on Cs3Cu2I5/n - Si was constructed, and the deep-ultraviolet photo-response was obtained. A high I-light/I-dark ratio of 130 was achieved at -1.3 V, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44 x 10(11) cm.Hz(1/2). W-1. Moreover, the device showed good stability after being exposed to air for 30 days. (C) 2021 Optical Society of America

Automated summary

In this study, all-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared and used in a heterojunction photodetector. The device showed high sensitivity to deep-ultraviolet light with good stability, offering potential for applications in deep-ultraviolet photodetection.