4.7 Article

Effect of position-dependent effective mass on electron tunneling of InAs/GaSb type-II superlattice having triangular and parabolic geometries

期刊

OPTICS AND LASER TECHNOLOGY
卷 138, 期 -, 页码 -

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ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2020.106840

关键词

Electron tunneling; InAs/GaSb type-II superlattice; Effective mass

资金

  1. Young Researchers and Elites club, Science and Research Branch, Islamic Azad University, Tehran, Iran

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In this study, the transmission probability of a triple quantum well triple barrier structure was investigated using the propagation matrix method for InAs/GaSb type-II superlattice. The effects of different barriers and wells widths, as well as wells geometry, on the transmission coefficient were independently studied. It was found that the variation of material composition of barriers in a specified structure can affect the tunneling effect.
In a recent paper, we presented transmission probability of a triple quantum well triple barrier structure having triangular and parabolic geometries in presence of finite thick contact barriers using propagation matrix method for InAs/GaSb type-II superlattice. In this letter, effect of different barriers and wells widths and wells geometry are independently studied on transmission coefficient, and also for a specified structure, material composition of barriers is varied to observe the tunnelling effect. We show that the number of peaks in transmission (-ln(Trans(E))) for 30 nm wells width and 10 nm barriers width is more than10nm wells width and 30 nm barriers width.

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