Photoluminescence of Bi3+ doped in YOF phosphor as an activator

Photoluminescence (PL) studies of yttrium oxyfluoride (YOF) doped with bismuth (Bi3+) revealed a broad ultraviolet emission band centered at 31 800 cm(-1) that can be applied for silicon solar cells. YOF doped with different Bi3+ concentrations were synthesized by using the reported pyrolysis technique and annealed at 900 degrees C. X-ray photoelectron spectroscopy showed two doublet peaks for the Bi 4f region which were attributed to Bi3+ ions and Bi metal. The PL excitation band was a symmetric broad band centered at 37 500 cm(-1) nm and corresponded to the S-1(0) -> P-3(1) A band with a Stokes shift of 5600 cm(-1). This excitation overlapped with a metal to metal charge transfer band of Bi3+. The optimum concentration was 0.4 mol % of Bi3+ and the quantum yield of this sample was about 60%.

Automated summary

PL studies of YOF doped with Bi3+ showed a broad UV emission band suitable for silicon solar cells. XPS revealed doublet peaks for Bi3+ ions and Bi metal in the Bi 4f region. The optimal doping concentration was 0.4 mol% with a quantum yield of around 60%.