4.8 Article

Interlayer electronic coupling on demand in a 2D magnetic semiconductor

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NATURE MATERIALS
卷 20, 期 12, 页码 1657-+

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NATURE PORTFOLIO
DOI: 10.1038/s41563-021-01070-8

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资金

  1. US Air Force Office of Scientific Research [FA9550-18-1-0020]
  2. US Department of Energy (DoE), Basic Energy Sciences (BES) [DE-SC0018171]
  3. Center on Programmable Quantum Materials, an Energy Frontier Research Center - DoE, Office of Science, BES [DE-SC0019443]
  4. Graduate Fellowship from Clean Energy Institute - State of Washington
  5. Micron Foundation
  6. Vannevar Bush Faculty Fellowship through the Office of Naval Research [N00014-18-1-2080]
  7. U.S. Department of Energy (DOE) [DE-SC0018171] Funding Source: U.S. Department of Energy (DOE)

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Interlayer hybridization in 2D van der Waals materials can change their properties, such as the coupling in CrSBr which can be changed by switching the magnetic order. The stacking of monolayers of 2D materials can introduce new properties, like moire bands and highly correlated electronic states.
Interlayer hybridization in 2D van der Waals materials can change their properties. Here, it is shown that the coupling in CrSBr can be changed from switching the magnetic order from antiferromagnetic to ferromagnetic states. When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moire bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tunable excitonic transitions, in an A-type antiferromagnetic 2D semiconductor CrSBr. Excitonic transitions in bilayers and above can be drastically changed when the magnetic order is switched from the layered antiferromagnetic ground state to a field-induced ferromagnetic state, an effect attributed to the spin-allowed interlayer hybridization of electron and hole orbitals in the latter, as revealed by Green's function-Bethe-Salpeter equation (GW-BSE) calculations. Our work uncovers a magnetic approach to engineer electronic and excitonic effects in layered magnetic semiconductors.

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