Tension-compression asymmetry in amorphous silicon

Submicrometre-sized amorphous silicon samples show an unusually large tensile strength relative to the compressive strength, which is due to the reduced shear modulus and the activation energy barrier for shear transformations under compression. Hard and brittle materials usually exhibit a much lower strength when loaded in tension than in compression. However, this common-sense behaviour may not be intrinsic to these materials, but arises from their higher flaw sensitivity to tensile loading. Here, we demonstrate a reversed and unusually pronounced tension-compression asymmetry (tensile strength exceeds compressive strength by a large margin) in submicrometre-sized samples of isotropic amorphous silicon. The abnormal asymmetry in the yield strength and anelasticity originates from the reduction in shear modulus and the densification of the shear-activated configuration under compression, altering the magnitude of the activation energy barrier for elementary shear events in amorphous Si. In situ coupled electrical tests corroborate that compressive strains indeed cause increased atomic coordination (metallization) by transforming some local structures from sp(3)-bonded semiconducting motifs to more metallic-like sites, lending credence to the mechanism we propose. This finding opens up an unexplored regime of intrinsic tension-compression asymmetry in materials.

Automated summary

The study reveals an unusual tension-compression asymmetry in submicrometre-sized samples of isotropic amorphous silicon, with the reduction in shear modulus and densification of shear-activated configuration under compression leading to abnormal asymmetry in yield strength and anelasticity.