期刊
NANOTECHNOLOGY
卷 32, 期 40, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ac1132
关键词
electrospinning; LLTO nanofiber; flexible synaptic transistor
资金
- Natural Science Foundation of China [61774100]
- National Science Foundation for Distinguished Young Scholars of China [51725505]
- Shanghai Science and Technology Commission [19JC1412400, 18JC1410402]
- Science and Technology Commission of Shanghai Municipality Program [19DZ2281000]
A new strategy utilizing electrospun Li0.33La0.557TiO3 nanofibers to enhance ion transport pathway in polymer-based solid electrolytes was proposed in order to improve the performance of flexible synaptic transistors. The study successfully simulated various synaptic neuron functions using flexible InZnO synaptic transistors with Li0.33La0.557TiO3 nanofibers-based solid electrolytes, presenting a significant attempt in developing high-performance synaptic transistors.
With the rapid development of wearable artificial intelligence devices, there is an increasing demand for flexible oxide neuromorphic transistors with the solid electrolytes. To achieve high-performance flexible synaptic transistors, the solid electrolytes should exhibit good mechanical bending characteristics and high ion conductivity. However, the polymer-based electrolytes with good mechanical bending characteristics show poor ion conductivity (10(-6)-10(-7) S cm(-1)), which limits the performance of flexible synaptic transistors. Thus, it is urgent to improve the ion conductivity of the polymer-based electrolytes. In the work, a new strategy of electrospun Li0.33La0.557TiO3 nanofibers-enhanced ion transport pathway is proposed to simultaneously improve the mechanical bending and ion conductivity of polyethylene oxide/polyvinylpyrrolidone-based solid electrolytes. The flexible InZnO synaptic transistors with Li0.33La0.557TiO3 nanofibers-based solid electrolytes successfully simulated excitatory post-synaptic current, paired-pulse-facilitation, dynamic time filter, nonlinear summation, two-terminal input dynamic integration and logic function. This work is a useful attempt to develop high-performance synaptic transistors.
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