Plasmon-assisted polarization-sensitive photodetection with tunable polarity for integrated silicon photonic communication systems

To establish high-bandwidth chip-to-chip interconnects in optoelectronic integrated circuits, requires high-performance photon emitters and signal receiving components. Regarding the photodetector, fast device concepts like Schottky junction devices, large carrier mobility materials and shrinking the channel length will enable higher operation speed. However, integrating photodetectors in highly scaled ICs technologies is challenging due to the efficiency-speed trade-off. Here, we report a scalable and CMOS-compatible approach for an ultra-scaled germanium (Ge) based photodetector with tunable polarity. The photodetector is composed of a Ge Schottky barrier field effect transistor with monolithic aluminum (Al) source/drain contacts, offering plasmon assisted and polarization-resolved photodetection. The ultra-scaled Ge photodetector with a channel length of only 200 nm shows high responsivity of about R = 424 A W-1 and a maximum polarization sensitivity ratio of TM/TE = 11.

Automated summary

In order to establish high-bandwidth chip-to-chip interconnects in optoelectronic integrated circuits, high-performance photon emitters and signal receiving components are required. Despite fast device concepts and high carrier mobility materials, integrating photodetectors in highly scaled IC technologies remains challenging.