Columnar nitrogen-doped ZnO nanostructured thin films obtained through atomic layer deposition

The present study was aimed to develop nitrogen-doped nanostructured ZnO thin films. These films were produced in a sequential procedure involving the atomic layer deposition technique, and a hydrothermal process supported by microwave heating. Employing the atomic layer deposition technique, through self-limited reactions of diethylzinc (DEZn) and H2O, carried out at 3.29 x 10(-4) atm and 190 degrees C, a high-quality ZnO seed was grown on a Si (100) substrate, producing a textured film. In a second stage, columnar ZnO nanostructures were grown perpendicularly oriented to the silicon substrate on those films, using a solvothermal process in a microwave heating facility, employing Zn(NO3)(2) as zinc precursor, while hexamethylenetetramine (HMTA) was used to produce the bridging of Zn2+ ions. The consequence of N-doping concentration on the physicochemical properties of ZnO thin films was studied. The manufactured films were structurally analyzed by scanning electron microscopy and x-ray diffraction. Also, x-ray photoelectron spectroscopy, Raman, and UV-vis spectroscopies were used to provide further insight on the effect of nitrogen doping. The N-doped films displayed textured wurtzite-like structures that changes their preferential growth from the (002) to the (100) crystallographic plane, apparently promoted by the increase of nitrogen precursor. It is also shown that nitrogen-doped films undergo a reduction in their bandgap, compared to ZnO. The methodology presented here provides a viable way to perform high-quality N-ZnO nanostructured thin films.

Automated summary

The study aimed to develop nitrogen-doped nanostructured ZnO thin films using a sequential procedure involving atomic layer deposition and a hydrothermal process with microwave heating. The N-doped films showed textured wurtzite-like structures and a reduction in bandgap compared to pure ZnO. This methodology provides a viable way to produce high-quality N-ZnO nanostructured thin films.