期刊
NANO RESEARCH
卷 15, 期 3, 页码 2489-2496出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-021-3745-9
关键词
heterostructure; MoSe2; PdSe2; self-powered photodetector; high performance
类别
资金
- National Natural Science Foundation of China [61775241]
- Hunan Science Fund for Distinguished Young Scholar [2020JJ2059]
- Hunan Province Key Research and Development Project [2019GK2233]
- Youth Innovation Team of CSU [2019012]
- Hunan Province Graduate Research and Innovation Project [CX20190177]
- Science and Technology Innovation Basic Research Project of Shenzhen [JCYJ20180307151237242]
- Project of State Key Laboratory of High-Performance Complex Manufacturing, Central South University [ZZYJKT2020-12]
- Australian Research Council (ARC) [DP210103539, DP180102976, DP130104231]
Engineering of van der Waals' two-dimensional material heterostructures has led to the fabrication of a high-performance self-powered photodetector with excellent current rectification characteristics and photovoltaic behaviors, capable of responding to a broad spectrum from visible to near-infrared with high responsivity and fast response speed. The heterojunction photodetector demonstrated great application potential in image recognition and is expected to bring new opportunities for highly sensitive, high-speed, and energy-efficient photodetectors for comprehensive applications.
Van der Waals' two-dimensional (2D) material heterostructure engineering offers an effective strategy for the design of multifunctional and high-performance optoelectronic devices. However, 2D heterostructure photodetectors with a photoconductive effect tend to suffer from high driving source-drain voltages and significant dark noise currents. Herein, a self-powered photodetector with high performance was fabricated based on vertically stacked graphene/MoSe2/PdSe2/graphene heterojunctions through a dry transfer method. The fabricated device displays current rectification characteristics in darkness (on/off ratio > 10(3)) and superior photovoltaic behaviors under illumination. In addition, benefitting from the strong built-in field, the Gr/PdSe2/MoSe2/Gr heterojunction photodetector is able to respond to a broad spectrum from visible to near-infrared (NIR) with a remarkable responsivity of 651 mA center dot W-1, a high specific detectivity of 5.29 x 10(11) Jones and a fast response speed of 41.7/62.5 mu s. Moreover, an enhanced responsivity of 1.16 A center dot W-1 has been obtained by a reverse voltage (-1 V) and further evaluation on image recognition has also demonstrated the great application potential of the Gr/MoSe2/PdSe2/Gr heterojunction photodetector. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient photodetectors for comprehensive applications.
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