4.8 Article

Epitaxially Grown InP Micro-Ring Lasers

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Summary: By elaborately combining selective area growth of fins and zipper-induced epitaxial lateral overgrowth, the epitaxy of wurtzite InP microdisks and related geometries on insulator has been achieved, enabling co-integration of diversely shaped crystals at precise position. The grown material possesses high phase purity and excellent optical quality characterized by STEM and mu-PL. Optically pumped lasing at room temperature is achieved in microdisks with a lasing threshold of 365 mu J cm(-2). Our platform could provide novel geometries for photonic applications.

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