Superconducting Contacts to a Monolayer Semiconductor

We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS2), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS2 regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction-dependent gap characteristics, suggesting a superconducting proximity effect. Magneto-resistance measurements show that the bandstructure and the high intrinsic carrier mobility remain intact in the bulk of the MoS2. This type of VIA contact is applicable to a large variety of layered materials and superconducting contacts, opening up a path to monolayer semiconductors as a platform for superconducting hybrid devices.

Automated summary

The study demonstrates the use of superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS2), with MoRe as the contact material, showing electron transport dominated by a single superconductor/normal conductor junction with a clear superconductor gap. Additionally, strongly coupled MoS2 regions to the superconductor exhibit resonant Andreev tunneling and junction-dependent gap characteristics, indicating a superconducting proximity effect.