期刊
NANO LETTERS
卷 21, 期 14, 页码 5914-5919出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c00668
关键词
magnetic topological insulator; spacer layer; van Vleck mechanism; anomalous Hall effect; topological Hall effect; Dzyaloshinskii-Moriya interaction
类别
资金
- center for Quantum Materials Synthesis (cQMS) - Gordon and Betty Moore Foundation's EPiQS initiative [GBMF6402]
- Rutgers University
- Army Research Office (ARO) [W911NF-20-1-0108]
- Materials Science and Engineering Divisions, Office of Basic Energy Sciences of the U.S. Department of Energy [DESC0012704]
- MURI [W911NF2020166]
Researchers have successfully demonstrated tunable magnetic properties in topological heterostructures by controlling the thickness of nonmagnetic spacer layers. Additionally, the interaction between the MTIs and Cr2O3 buffer layers results in a robust topological Hall effect that can withstand high magnetic fields, showcasing the critical role of interfacial layers in thin-film topological materials.
Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs and is commonly achieved by changing the magnetic doping concentration, which inevitably affects the spin-orbit coupling strength and the topological properties. Here, we demonstrate tunable magnetic properties in topological heterostructures over a wide range, from a ferromagnetic phase with a Curie temperature of around 100 K all the way to a paramagnetic phase, while keeping the overall chemical composition the same, by controlling the thickness of nonmagnetic spacer layers between two atomically thin magnetic layers. This work showcases that spacer-layer control is a powerful tool to manipulate magneto-topological functionalities in MTI heterostructures. Furthermore, the interaction between the MTI and the Cr2O3 buffer layers also leads to a robust topological Hall effect surviving up to a record-high 6 T of magnetic field, shedding light on the critical role of interfacial layers in thin-film topological materials.
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