Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires

With strikingly high speed, data retention ability and storage density, resistive RAMs have emerged as a forerunning nonvolatile memory. Here we developed a Re-RAM with ultra-high density array of monocrystalline perovskite quantum wires (QWs) as the switching matrix with a metallic silver conducting pathway. The devices demonstrated high ON/OFF ratio of similar to 10(7) and ultra-fast switching speed of similar to 100 ps which is among the fastest in literature. The devices also possess long retention time of over 2 years and record high endurance of similar to 6 x 10(6) cycles for all perovskite Re-RAMs reported. As a concept proof, we have also successfully demonstrated a flexible Re-RAM crossbar array device with a metal-semiconductor-insulator-metal design for sneaky path mitigation, which can store information with long retention. Aggressive downscaling to similar to 14 nm lateral dimension produced an ultra-small cell effectively having 76.5 nm(2) area for single bit storage. Furthermore, the devices also exhibited unique optical programmability among the low resistance states.

Automated summary

Resistive RAMs with monocrystalline perovskite quantum wires exhibit high speed, data retention ability, and storage density. The devices show high ON/OFF ratio, ultra-fast switching speed, long retention time, and record high endurance. A flexible crossbar array device with metal-semiconductor-insulator-metal design for sneaky path mitigation has also been successfully demonstrated.