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F. Piva et al.
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Aurelien David et al.
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Jiandong Feng et al.
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A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities
Stefan T. Jagsch et al.
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Point defect engineering in thin-film solar cells
Ji-Sang Park et al.
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GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
C. Haller et al.
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Yi Jiang et al.
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Andreas Hangleiter et al.
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C. Haller et al.
APPLIED PHYSICS LETTERS (2017)
Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells
Aurelien David et al.
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Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells
Andreas Hangleiter et al.
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Xiahan Sang et al.
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Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
Cyrus E. Dreyer et al.
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Bright UV Single Photon Emission at Point Defects in h-BN
Romain Bourrellier et al.
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James M. Ball et al.
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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
Andrew M. Armstrong et al.
JOURNAL OF APPLIED PHYSICS (2015)
Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength
Andrew M. Armstrong et al.
APPLIED PHYSICS EXPRESS (2014)
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
M. A. Reshchikov et al.
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Room temperature excitonic recombination in GaInN/GaN quantum wells
Torsten Langer et al.
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Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well
Hans-Michael Solowan et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes
A. Armstrong et al.
OPTICS EXPRESS (2012)
Determination of diffusion lengths in nanowires using cathodoluminescence
Anders Gustafsson et al.
APPLIED PHYSICS LETTERS (2010)
STED microscopy reveals crystal colour centres with nanometric resolution
Eva Rittweger et al.
NATURE PHOTONICS (2009)
Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
N. Pauc et al.
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U Jahn et al.
PHYSICAL REVIEW B (2006)
Measured and calculated radiative lifetime and optical absorption of InxGa1-xN/GaN quantum structures
E Berkowicz et al.
PHYSICAL REVIEW B (2000)