4.5 Article

Automated Crystal Orientation Mapping by Precession Electron Diffraction-Assisted Four-Dimensional Scanning Transmission Electron Microscopy Using a Scintillator-Based CMOS Detector

期刊

MICROSCOPY AND MICROANALYSIS
卷 27, 期 5, 页码 1102-1112

出版社

OXFORD UNIV PRESS
DOI: 10.1017/S1431927621012538

关键词

four-dimensional scanning electron microscopy (4D-STEM); orientation mapping; precession electron diffraction (PED); transmission electron microscopy (TEM)

资金

  1. Max Planck Society
  2. ERC [787446]
  3. European Research Council (ERC) [787446] Funding Source: European Research Council (ERC)

向作者/读者索取更多资源

This study introduces a novel 4D-STEM technique utilizing a CMOS detector to automatically perform orientation mapping with diffraction spot patterns. Compared to traditional methods, the CMOS data significantly reduce false indexing and enhance reliability, while also improving angular resolution by masking reflections close to the direct beam. Fine details, such as nanograins and sub-grain boundaries, can be resolved with a sub-degree angular resolution.
The recent development of electron-sensitive and pixelated detectors has attracted the use of four-dimensional scanning transmission electron microscopy (4D-STEM). Here, we present a precession electron diffraction-assisted 4D-STEM technique for automated orientation mapping using diffraction spot patterns directly captured by an in-column scintillator-based complementary metal-oxide-semiconductor (CMOS) detector. We compare the results to a conventional approach, which utilizes a fluorescent screen filmed by an external charge charge-coupled device camera. The high-dynamic range and signal-to-noise characteristics of the detector greatly improve the image quality of the diffraction patterns, especially the visibility of diffraction spots at high scattering angles. In the orientation maps reconstructed via the template matching process, the CMOS data yield a significant reduction of false indexing and higher reliability compared to the conventional approach. The angular resolution of misorientation measurement could also be improved by masking reflections close to the direct beam. This is because the orientation sensitive, weak, and small diffraction spots at high scattering angles are more significant. The results show that fine details, such as nanograins, nanotwins, and sub-grain boundaries, can be resolved with a sub-degree angular resolution which is comparable to orientation mapping using Kikuchi diffraction patterns.

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