相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Comparing bulk-Si FinFET and gate-all-around FETs for the 5 nm technology node
Vinay Vashishtha et al.
MICROELECTRONICS JOURNAL (2021)
RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric
Kumari Nibha Priyadarshani et al.
MICROELECTRONICS JOURNAL (2021)
Negative drain-induced barrier lowering and negative differential resistance effects in negative-capacitance transistors
Tianyu Yu et al.
MICROELECTRONICS JOURNAL (2021)
Improved modeling of flicker noise including velocity saturation effect in FinFETs and experimental validation
Ravi Goel et al.
MICROELECTRONICS JOURNAL (2021)
A novel ultra-low-power CNTFET and 45 nm CMOS based ternary SRAM
Abhay S. Vidhyadharan et al.
MICROELECTRONICS JOURNAL (2021)
A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
J. Ajayan et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)
Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET
Rajesh Saha
MICROELECTRONICS JOURNAL (2021)
An improved GaN P-HEMT small-signal equivalent circuit with its extraction
Jincan Zhang et al.
MICROELECTRONICS JOURNAL (2021)
Nanowire & nanosheet FETs for ultra-applications scaled, high-density logic and memory
A. Veloso et al.
SOLID-STATE ELECTRONICS (2020)
Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment
D. -I. Bae et al.
ELECTRONICS LETTERS (2020)
Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation
Xiaogen Yin et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs
Alberto V. de Oliveira et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Compact Model for Geometry Dependent Mobility in Nanosheet FETs
Avirup Dasgupta et al.
IEEE ELECTRON DEVICE LETTERS (2020)
BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs
Avirup Dasgupta et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Design Considerations for Si- and Ge-Stacked Nanosheet pMOSFETs Based on Quantum Transport Simulations
Shuo Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Sensitivity of Source/Drain Critical Dimension Variations for Sub-5-nm Node Fin and Nanosheet FETs
Jun-Sik Yoon et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage Perspective
Donghyun Ryu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
Yunho Choi et al.
SOLID-STATE ELECTRONICS (2020)
A source/drain-on-insulator structure to improve the performance of stacked nanosheet field-effect transistors
V Jegadheesan et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2020)
Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process Scheme
Jun-Sik Yoon et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs
Sihyun Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Opportunities in Device Scaling for 3-nm Node and Beyond: FinFET Versus GAA-FET Versus UFET
Uttam Kumar Das et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs
Shanxue Xi et al.
MICROELECTRONICS JOURNAL (2020)
On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges
Hung-Yu Ye et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor
V. Jegadheesan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters
Po-Jung Sung et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET
Sankatali Venkateswarlu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Nanosheet FET: A new subthreshold current model caused by interface-trapped-charge and its application for evaluation of subthreshold logic gate
Te-kuang Chiang
MICROELECTRONICS JOURNAL (2020)
Preparation of spintronically active ferromagnetic contacts based on Fe, Co and Ni Graphene nanosheets for Spin-Field Effect Transistor
Neetu Gyanchandani et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2020)
Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates
Alberto Oliveira et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet Transistors
Fahimul Islam Sakib et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Compact Modeling of Surface Potential, Drain Current and Terminal Charges in Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport
Amol D. Gaidhane et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2020)
Comparison of LER Induced Mismatch in NWFET and NSFET for 5-nm CMOS
Chandan Kumar Jha et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2020)
Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application
Jinsu Jeong et al.
IEEE ACCESS (2020)
Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
Daniel Nagy et al.
IEEE ACCESS (2020)
A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond
Qiang Huo et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2020)
Metal Source-/Drain-Induced Performance Boosting of Sub-7-nm Node Nanosheet FETs
Jun-Sik Yoon et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Impact of geometrical parameters and substrate on analog/RF performance of stacked nanosheet field effect transistor
V Jegadheesan et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2019)
Statistical simulation of self-heating induced variability and reliability with application to Nanosheet-FETs based SRAM
Wangyong Chen et al.
MICROELECTRONICS RELIABILITY (2019)
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
J. Ajayan et al.
MICROELECTRONICS JOURNAL (2019)
Performance analysis of parallel array of nanowires and a nanosheet in SG, DG and GAA FETs
Ghader Darbandy et al.
SOLID-STATE ELECTRONICS (2019)
Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors
Meng-Ju Tsai et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain
Jun-Sik Yoon et al.
IEEE ACCESS (2019)
Self-Organized Ge Nanospherical Gate/SiO2/Si0.15Ge0.85-Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
Po-Hsiang Liao et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Stacked Ge-Nanosheet GAAFETs Fabricated by Ge/Si Multilayer Epitaxy
Chun-Lin Chu et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Vertically Stacked Strained 3-GeSn-Nanoshee pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process
Yu-Shiang Huang et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI
Gage Hills et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2018)
Multi-V-th Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet Spacing
Jun-Sik Yoon et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Systematic DC/AC Performance Benchmarking of Sub-7-nm Node FinFETs and Nanosheet FETs
Jun-Sik Yoon et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Single-Event Transient in FinFETs and Nanosheet FETs
Jungsik Kim et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node
Doyoung Jang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
分享论文
