The growth of solution-gelation TiO2 and its application to InAlAs/InGaAs metamorphic high-electron-mobility transistor

The study investigated titanium dioxide (TiO2) on indium phosphide (InP) prepared by solution-gelation (sol-gel) process and application to InAlAs/InGaAs metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT). The sol-gel TiO2 exhibits not only easy process and without plasma source, but also high dielectric constant to improve the interface state between metal and semiconductor. The InAlAs/InGaAs MHEMT with sol-gel processed TiO2 as gate oxide reveals superior electrical characteristics than the reference case. These electrical characteristics include better drain current density, larger turn-on voltage, improved reverse breakdown voltage, as well as smaller gate leakage current density. These results indicate the potentiality of the proposed sol-gel process TiO2 as gate oxide on InAlAs/InGaAs MHEMT for further power application.

Automated summary

The study demonstrated that sol-gel processed TiO2 can be successfully applied to InAlAs/InGaAs MHEMT, enhancing the electrical performance of the devices, showing potential in power applications.