Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition

We achieved rapid homoepitaxial growth of beta-Ga2O3 thin films with smooth surfaces using a mist chemical vapor deposition (CVD) process. A smooth film was grown at a rate of 3.2 mu m/h using a concentrated aqueous solution of the GaCl3 precursor. Homoepitaxial growth of a smooth (010) beta-Ga2O3 thin film was achieved via mist CVD at 750 degrees C, and the growth of beta-Ga2O3 in different orientations was not observed. The GaCl3 precursor was highly soluble in water and enabled the rapid growth of homoepitaxial beta-Ga2O3 thin films with smooth surfaces.

Automated summary

Utilizing mist chemical vapor deposition (CVD) process, rapid homoepitaxial growth of beta-Ga2O3 thin films with smooth surfaces was achieved using a concentrated aqueous solution of GaCl3 precursor.