期刊
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ELSEVIER
DOI: 10.1016/j.mseb.2021.115214
关键词
Cd0.4Zn0.6O alloy; Cu/Mn doping; XRD-FTIR; PL; Resistivity; Mobility etc
The study prepared Cu/Mn-doped Cd0.4Zn0.6O alloy using co-precipitation and investigated the effects of dopant concentration on the alloy properties. The doping significantly altered the crystal structure and optoelectronic properties of the alloy, showing potential as a superior TCO for material science researchers.
Pure and Cu/Mn-doped Cd0.4Zn0.6O (0 <= x <= 1) ternary alloy is prepared by co-precipitation and further the variation of dopant concentration has been studied. The diffractogram of the undoped sample has peaks of both rocksalt (RS) CdO and wurtzite (WZ) ZnO phase. The individual and simultaneous doping of Cu and Mn elements has significantly altered the intensity, FWHM, and developments of defect states in Cd0.4Zn0.6O alloy. TEM microscope has investigated the crystalline size and interplanar spacing that is slightly decreased with dopant concentration which lies within the range similar to 38-30 nm. UV-Vis spectroscopy analyzed a decreasing trend in bandgap energy with dopant concentration. IN PL, the near band edge and deep trap state emission is observed at 382, 417, 448, 520 and 580 nm wavelengths. The resistivity, carrier concentration, and mobility are also computed which proposed that Cu/Mn-doped Cd0.4Zn0.6O alloy could be the better TCO with new opportunities for material science researchers.
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