On-Chip Integrated Waveguide Amplifiers on Erbium-Doped Thin-Film Lithium Niobate on Insulator

On-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography-assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm(-1). This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

Automated summary

Utilizing the PLACE technique, on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) was demonstrated with a maximum internal net gain of 18 dB. This work opens the way for the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.