Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition

This study investigates amorphous SiCN thin films deposited by remote plasma atomic layer deposition. Bis[(diethylamino)dimethylsilyl](trimethylsilyl)amine (DTDN-2) and N-2 plasma were used as the precursor and reactant, respectively. The deposition temperature ranged from 100 to 300 degrees C, and the plasma power was set to 100 and 300W. It was determined that the SiCN film carbon content increased with decreasing plasma power and deposition temperature. Likewise, decreasing the plasma power and deposition temperature lowered the dielectric constant of the film owing to the low film density and high carbon content. It was found that the composition of the SiCN film deposited at 300 degrees C was similar to that of the SiN film. The wet etch rate of the film deposited at 200 degrees C had the lowest value owing to the carbon content and high film density. The chemical bonding states of Si, C, and N were measured by x-ray photoelectron spectroscopy.

Automated summary

The study investigated amorphous SiCN thin films deposited by remote plasma atomic layer deposition using different deposition temperatures and plasma powers. It was found that the carbon content and dielectric constant of the film can be controlled by varying these parameters, impacting the chemical composition and wet etch rate.