4.8 Article

Realization of vis-NIR Dual-Modal Circularly Polarized Light Detection in Chiral Perovskite Bulk Crystals

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 143, 期 35, 页码 14077-14082

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jacs.1c07183

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资金

  1. National Natural Science Foundation of China [21971238, 21833010, 21525104, 21875251, 21975258, 61975207, 21921001]
  2. Key Research Program of Frontier Sciences of the Chinese Academy of Sciences [ZDBS-LY-SLH024]
  3. NSF of Fujian Province [2018H0047]
  4. Strategic Priority Research Program of the Chinese Academy of Sciences [XDB20010200]
  5. Youth Innovation Promotion of CAS
  6. CAS/SAFEA International Partnership Program for Creative Research Teams

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This study presents the visible-near-infrared dual-modal CPL-sensitive direct detection in bulk single crystals of two-dimensional chiral perovskite for the first time. By designing new chiral semiconductors with strong light-matter interaction, high detection performance is achieved.
Circularly polarized light (CPL)-sensitive direct detection is attracting increasing attention owing to its various optical technology applications and ultracompact device structures. However, current CPL-sensitive direct detection mainly focuses on a single mode, whereas the visible-near-infrared (vis-NIR) dual-modal detection, which is important for improving device sensitivity and night-vision performance, still remains to be explored. Here, for the first time, the vis-NIR dual-modal CPL-sensitive direct detection is presented in bulk single crystals of two-dimensional chiral perovskite (R-BPEA)(2)PbI4 (R-BPEA = (R)-1-(4-bromophenyl)ethylammonium). Benefiting from the strong light-matter interaction of the layered structure, (R-BPEA)(2)PbI4 shows a two-photon absorption (TPA) coefficient of up to 55 cm/MW, which almost falls around the highest value of 2D hybrid perovskites. Notably, (R-BPEA)(2)PbI4 exhibits a high vis-NIR dual-modal CPL-sensitive direct detecting performance under both visible light (520 nm) and NIR light (800 nm), with the on/off ratios of current higher than 10(3), and the anisotropy factors for photocurrent higher than 0.1. This work will shed light on the design of new chiral semiconductors with a large TPA coefficient and promote their applications in vis-NIR dual-modal CPL-sensitive direct detection.

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